US 2022/0102495 A1 · TRANSISTORS INCLUDING TWO-DIMENSIONAL MATERIALS

Abstract

Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.

Claims20

Dependent claims

A microelectronic structure, comprising:

a transistor, including:
a channel, wherein the channel includes a first two-dimensional material region, and
a source/drain (S/D), wherein the S/D includes a second two-dimensional material region, and a thickness of the first two-dimensional material region is less than a thickness of the second two-dimensional material region.

Dependencies are inferred from the claim text.

Facts

Application

17/032,669Filed 25 Sep 2020

Published

31 Mar 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10D 30/472
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having lower bandgap active layer formed on top of wider…
H10D 62/151
Source or drain regions of field-effect devices: of igfets
H10D 30/481
Having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]: fETs having…
H10D 30/60
Field-effect transistors [FET]: insulated-gate field-effect transistors [IGFET]

Transistors including two-dimensional materials

Life of this patent

Transistors including two-dimensional materials

Life of this patent

Abstract

Claims20