US 2022/0102487 A1 · SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A WELL REGION

Abstract

A transistor cell includes a gate electrode and a source region of a first conductivity type. A drain/drift region is formed in a silicon carbide body. A buried region of the second conductivity type and the drain/drift region form a pn junction. The buried region and a well region form a unipolar junction. A mean net dopant density N2 of the buried region is higher than a mean net dopant density N1 of the well region. A first clamp region of the first conductivity type extends into the well region. A first low-resistive ohmic path electrically connects the first clamp region and the gate electrode. A second clamp region of the first conductivity type extends into the well region. A second low-resistive ohmic path electrically connects the second clamp region and the source region.

Claims14

Dependent claims

A silicon carbide device, comprising:

a transistor cell comprising a gate electrode and a source region of a first conductivity type;
a drain/drift region formed in a silicon carbide body;
a well region of a second conductivity type;
a buried region of the second conductivity type, wherein the buried region and the drain/drift region form a pn junction, wherein the buried region and the well region form a unipolar junction, and wherein a mean net dopant density N2 of the buried region is higher than a mean net dopant density N1 of the well region;
a first clamp region of the first conductivity type, wherein the first clamp region extends into the well region, and wherein a first low-resistive ohmic path electrically connects the first clamp region and the gate electrode;
and
a second clamp region of the first conductivity type wherein the second clamp region extends into the well region, and wherein a second low-resistive ohmic path electrically connects the second clamp region and the source region.

4 more elements

Dependencies are inferred from the claim text.

Silicon carbide device with transistor cell and clamp regions in a well region

Life of this patent

Silicon carbide device with transistor cell and clamp regions in a well region

Life of this patent

Abstract

Claims14