Semiconductor device and manufacturing method of semiconductor device
AssigneeDenso Corporation
InventorsHidefumi TAKAYA, Yuichi TAKEUCHI, Yukihiko WATANABE
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Abstract
A semiconductor device includes a semiconductor substrate having an element region and a terminal region located around the element region. The terminal region includes multiple guard rings and multiple first diffusion regions. When the semiconductor substrate is viewed in a plan view, one of the first diffusion regions is arranged correspondingly to one of the guard rings, and each of the guard rings is located in corresponding one of the first diffusion regions. A width of each of the first diffusion regions is larger than a width of corresponding one of the guard rings.
Claims12
A semiconductor device comprising:
- a semiconductor substrate having a first main surface and a second main surface opposite from each other;
- a first electrode disposed on the first main surface of the semiconductor substrate;
- and
- a second electrode disposed on the second main surface of the semiconductor substrate, wherein
- the semiconductor substrate includes:
- an element region in which a switching element structure is formed, and
- a terminal region located around the element region,
- the terminal region includes:
- a plurality of guard rings of p-type disposed at a plurality of positions exposed on the first main surface of the semiconductor substrate, each of the plurality of guard rings making a circuit around the element region, and
- a plurality of first diffusion regions of p-type disposed at a first depth from the first main surface of the semiconductor substrate, each of the plurality of first diffusion regions being separated from the plurality of guard rings in a thickness direction of the semiconductor substrate, and making a circuit around the element region,
- one of the plurality of first diffusion regions is arranged correspondingly to one of the plurality of guard rings when the semiconductor substrate is viewed in a plan view,
- each of the plurality of guard rings is located in corresponding one of the plurality of first diffusion regions when the semiconductor substrate is viewed in the plan view, and
- a width of each of the plurality of first diffusion regions is larger than a width of corresponding one of the plurality of guard rings.
A manufacturing method of a semiconductor device, comprising:
- preparing a semiconductor substrate including an element region for forming a switching element structure and a terminal region located around the element region;
- forming a mask on one main surface of the semiconductor substrate, the mask having a plurality of openings in a portion corresponding the terminal region;
- forming a plurality of guard rings of p-type at a plurality of positions exposed on the one main surface of the semiconductor substrate by implanting p-type impurity ions through the mask;
- and
- forming a plurality of first diffusion regions at a first depth from the one main surface of the semiconductor substrate by implanting p-type impurity ions through the mask, wherein
- each of the plurality of guard rings makes a circuit around the element region,
- each of the plurality of first diffusion regions is separated from the plurality of guard rings in a thickness direction of the semiconductor substrate and makes a circuit around the element region,
- one of the plurality of first diffusion regions is arranged correspondingly to one of the plurality of guard rings when the semiconductor substrate is viewed in a plan view,
- each of the plurality of guard rings is located in corresponding one of the plurality of first diffusion regions when the semiconductor substrate is viewed in the plan view, and
- a width of each of the plurality of first diffusion regions is larger than a width of corresponding one of the plurality of guard rings.
Dependencies are inferred from the claim text.