Method for manufacturing semiconductor structure, semiconductor structure, and memory
AssigneeChangxin Memory Technologies, Inc.
InventorYonghao DU
Life of this patent
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Abstract
A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided. A lower electrode is formed on the substrate. A capacitor dielectric layer is formed on a surface of the lower electrode. The capacitor dielectric layer includes at least one zirconium oxide layer. The capacitor dielectric layer is subjected with microwave annealing treatment to convert a crystal phase of zirconium oxide to a tetragonal crystal phase. An upper electrode is formed on a surface of the capacitor dielectric layer.
Claims14
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a lower electrode on the substrate;
- forming a capacitor dielectric layer on a surface of the lower electrode, wherein the capacitor dielectric layer comprises at least one zirconium oxide layer;
- subjecting the capacitor dielectric layer with a microwave annealing treatment to convert a crystal phase of zirconium oxide to a tetragonal crystal phase;
- and
- forming an upper electrode on a surface of the capacitor dielectric layer.
A semiconductor structure, comprising:
- a substrate;
- a lower electrode, located on the substrate;
- a capacitor dielectric layer, provided on a surface of the lower electrode, and comprising at least one zirconium oxide layer with a crystal phase of zirconium oxide being a tetragonal crystal phase;
- and
- an upper electrode, provided on a surface of the capacitor dielectric layer away from the lower electrode.
Dependencies are inferred from the claim text.