Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder

A structure, comprising:

• a semiconductor substrate;
• a polycrystalline resistor region over a semiconductor substrate, the polycrystalline resistor region including a semiconductor material in a polycrystalline morphology;
• an argon-including polycrystalline region between the polycrystalline resistor region and the semiconductor substrate;
• and
• an active device over the semiconductor substrate, wherein the active device includes a monocrystalline body and the argon-including polycrystalline region extends under the active device.

A method comprising:

• implanting a noble gas element into:
• a first monocrystalline region in a semiconductor substrate to form a first dopant-including polycrystalline region, and one of:
• an oxide layer in the semiconductor substrate to create a dopant-including polycrystalline region under the oxide layer, and a second monocrystalline region in the semiconductor substrate to create a second dopant-including polycrystalline region;
• annealing to reform an upper portion of the first dopant-including polycrystalline region into a reformed monocrystalline active region, leaving a portion of the first dopant-including polycrystalline region as an isolation layer under the reformed monocrystalline active region;
• and
• forming an active device over the reformed monocrystalline active region and a polycrystalline resistor over the one of the oxide layer and the second dopant-including polycrystalline region, and
• wherein the oxide layer is part of one of a trench isolation arrangement, and a gate dielectric layer.