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US 2022/0102447 A1Published application
Method of manufacturing polycrystalline silicon layer, display device, and method of manufacturing display device
AssigneeSamsung Display Co., Ltd.
InventorsDong-Sung LEE, Seo Jong OH, Byung Soo SO, Dong-min LEE
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Abstract
A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.
Claims8
A display device, comprising:
- a substrate;
- a thin film transistor disposed on the substrate;
- and
- a display element disposed on the thin film transistor,
- wherein:
- the thin film transistor comprises:
- an active pattern disposed on the substrate, the active pattern having a surface roughness with a root-mean-square (RMS) value of about 4 nm or less;
- a gate insulation layer disposed on the active pattern;
- and
- a gate electrode disposed on the gate insulation layer.
7 more elements
Dependencies are inferred from the claim text.