Magnetic memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKilho Lee, Gwanhyeob Koh
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Abstract
A magnetic memory device includes a magnetic tunnel junction pattern on a substrate, a first conductive pattern between the substrate and the magnetic tunnel junction pattern, lower contact plugs between the first conductive pattern and the substrate and disposed at respective sides of the magnetic tunnel junction pattern, and second conductive patterns on the lower contact plugs, respectively. The second conductive patterns connect the lower contact plugs to the first conductive pattern. The second conductive patterns include a ferromagnetic material.
Claims20
A magnetic memory device comprising:
- a magnetic tunnel junction pattern on a substrate;
- a first conductive pattern between the substrate and the magnetic tunnel junction pattern;
- lower contact plugs at respective sides of the magnetic tunnel junction pattern, at least a portion of each of the lower contact plugs being disposed between the first conductive pattern and the substrate;
- and
- second conductive patterns on the lower contact plugs, respectively, wherein the second conductive patterns connect the lower contact plugs to the first conductive pattern,
- wherein the second conductive patterns comprise a ferromagnetic material.
A magnetic memory device comprising:
- magnetic tunnel junction patterns arranged along and spaced apart in a first direction on a substrate;
- first conductive patterns under bottom surfaces of the magnetic tunnel junction patterns, respectively;
- and
- lower conductive patterns between the substrate and the first conductive patterns, wherein the lower conductive patterns are disposed between the magnetic tunnel junction patterns in a plan view and connect adjacent ones of the first conductive patterns,
- wherein the lower conductive patterns comprise first lower conductive patterns and second lower conductive patterns, which are alternately arranged in the first direction.
A magnetic memory device comprising:
- magnetic tunnel junction patterns arranged along and spaced apart in a first direction on a substrate;
- first conductive patterns under bottom surfaces of the magnetic tunnel junction patterns, respectively;
- and
- second conductive patterns between the substrate and the first conductive patterns and respectively extended between the magnetic tunnel junctions in a plan view, wherein each of the second conductive patterns includes a ferromagnetic material in an upper portion, wherein at least a portion of each of the second conductive patterns is overlapped to the first conductive patterns,
- wherein the second conductive patterns comprise:
- a first portion disposed at a first side of one of the first conductive patterns;
- and
- a second portion disposed at a second side of the one of the first conductive patterns.
Dependencies are inferred from the claim text.