Image sensor

An image sensor comprising:

• a semiconductor substrate with a trench;
• an insulating pattern in the trench of the semiconductor substrate:
• and
• a doped region disposed in the semiconductor substrate and on the insulating pattern,
• wherein the doped region comprises:
• a first region, which is in contact with the insulating pattern and comprises a dopant and a first auxiliary element;
• and
• a second region, which is interposed between the first region and the semiconductor substrate and comprises the dopant, and
• wherein a concentration of the dopant in the first region is higher than a concentration of the first auxiliary element in the first region.

An image sensor comprising:

• a substrate having a first surface and a second surface, which are opposite to each other, the substrate having a trench provided on one of the first surface and the second surface:
• photoelectric conversion regions provided between the first surface and the second surface of the substrate;
• color filters disposed on the second surface of the substrate;
• a fence pattern disposed between the color filters;
• a micro lens layer disposed on the color filters;
• impurity regions disposed in the substrate and adjacent to the first surface of the substrate;
• an interconnection layer disposed on the first surface of the substrate, the interconnection layer comprising lower insulating layers and an interconnection structure;
• an insulating pattern covering the trench of the substrate;
• and
• a doped region provided in the substrate and in contact with the insulating pattern,
• wherein the insulating pattern comprises a first surface and a second surface, which have inclination angles different from each other,
• the doped region comprises:
• a first portion on the first surface of the insulating pattern;
• and
• a second portion on the second surface of the insulating pattern,
• a thickness of the second portion of the doped region is from 85% to 115% of a thickness of the first portion of the doped region, and
• a number of dopants per unit area in the second portion of the doped region is from 85% to 115% of a number of dopants per unit area in the first portion.