US 2022/0102402 A1 · IMAGE SENSING DEVICE

Abstract

An image sensing device includes a first unit pixel block, a second unit pixel block, and an isolation transistor. The first unit pixel block includes a first common floating diffusion node, a plurality of first photoelectric conversion elements, a plurality of first transfer transistors configured to transmit the photocharges generated by the first photoelectric conversion elements to the first common floating diffusion node, and a first conversion gain transistor configured to change capacitance of the first common floating diffusion node. The second unit pixel block adjacent to the first unit pixel block in a first direction includes a second common floating diffusion node, a plurality of second photoelectric conversion elements, a plurality of second transfer transistors configured to transmit the photocharges generated by the second photoelectric conversion elements to the second common floating diffusion node, and a second conversion gain transistor configured to change capacitance of the second common floating diffusion node. The isolation transistor located in a boundary region between the first unit pixel block and the second unit pixel block isolates the first conversion gain transistor and the second conversion gain transistor from each other.

Claims20

Dependent claims

An image sensing device, comprising:

a first unit pixel block that includes a first common floating diffusion node, a plurality of first photoelectric conversion elements configured to generate photocharges through conversion of incident light, a plurality of first transfer transistors configured to transmit the photocharges generated by the plurality of first photoelectric conversion elements to the first common floating diffusion node, and a first conversion gain transistor configured to change capacitance of the first common floating diffusion node;
a second unit pixel block adjacent to the first unit pixel block in a first direction, that includes a second common floating diffusion node, a plurality of second photoelectric conversion elements configured to generate photocharges through conversion of incident light, a plurality of second transfer transistors configured to transmit the photocharges generated by the plurality of second photoelectric conversion elements to the second common floating diffusion node, and a second conversion gain transistor configured to change capacitance of the second common floating diffusion node;
and
an isolation transistor located in a boundary region between the first unit pixel block and the second unit pixel block, and configured to isolate the first conversion gain transistor and the second conversion gain transistor from each other.

1 more element

An image sensing device, comprising:

a first unit pixel block including a first floating diffusion region configured to store photocharges generated in response to an incident light incident on the first unit pixel block and a first portion of a first active region coupled to the first floating diffusion region through a first common floating diffusion node and including a first conversion gain transistor configured to change capacitance of the first common floating diffusion node;
a second unit pixel block disposed adjacent to the first unit pixel block and including a second floating diffusion region configured to store photocharges generated in response to an incident light incident on the second unit pixel block and a second portion of the first active region coupled to the second floating diffusion region through a second common floating diffusion node and including a second conversion gain transistor configured to change capacitance of the second common floating diffusion node;
and
an isolation transistor disposed between the first unit pixel block and the second unit pixel block in the first active region to isolate the first conversion gain transistor and the second conversion gain transistor from each other.

1 more element

Dependencies are inferred from the claim text.

Image sensing device

Life of this patent

Image sensing device

Life of this patent

Abstract

Claims20