Image Sensor Device and Method

A method comprising:

• forming a first pixel region, a second pixel region and a third pixel region in a semiconductor substrate, wherein forming the first pixel region, the second pixel region and the third pixel region comprises:
• forming a first photosensitive diode in the semiconductor substrate in the first pixel region;
• forming a second photosensitive diode in the semiconductor substrate in the second pixel region;
• forming a third photosensitive diode in the semiconductor substrate in the third pixel region;
• forming a first anti-reflection coating (ARC) over the first photosensitive diode, wherein forming the first ARC comprises:
• forming a first dielectric material over the first photosensitive diode;
• forming a second dielectric material over the first dielectric material, the second dielectric material being different from the first dielectric material;
• and
• forming a third dielectric material over the second dielectric material;
• forming a second ARC over the second photosensitive diode, wherein forming the second ARC comprises:
• forming the first dielectric material over the second photosensitive diode;
• and
• forming the second dielectric material over the first dielectric material;
• forming a third ARC over the third photosensitive diode, wherein forming the third ARC comprises forming the first dielectric material over the third photosensitive diode;
• forming a first color filter over the first ARC, the first color filter having a first thickness;
• forming a second color filter over the second ARC, the second color filter having a second thickness different from the first thickness;
• and
• forming a third color filter over the third ARC, the third color filter having a third thickness different from the second thickness, a topmost surface of the first color filter being level with a topmost surface of the second color filter and a topmost surface of the third color filter.

A method comprising:

• forming a first pixel region, a second pixel region and a third pixel region over a semiconductor substrate, wherein forming the first pixel region, the second pixel region and the third pixel region comprises:
• forming a first photosensitive diode in the semiconductor substrate in the first pixel region;
• forming a second photosensitive diode in the semiconductor substrate in the second pixel region;
• forming a third photosensitive diode in the semiconductor substrate in the third pixel region;
• and
• forming a first anti-reflection coating (ARC) over the first photosensitive diode, a second ARC over the second photosensitive diode, and a third ARC over the third photosensitive diode, wherein forming the first ARC over the first photosensitive diode, the second ARC over the second photosensitive diode, and the third ARC over the third photosensitive diode comprises:
• depositing a first material over the first photosensitive diode, the second photosensitive diode and the third photosensitive diode;
• after depositing the first material, depositing a second material over the first photosensitive diode and the second photosensitive diode, the second material being different from the first material, wherein a thickness of the second material is between about 20 Å and about 5000 Å, and wherein a top surface of the first material above the third photosensitive diode is not covered by the second material after depositing the second material;
• and
• after depositing the second material, depositing a third material over the first photosensitive diode, the third material being different from the first material and the second material, wherein a top surface of the second material above the first photosensitive diode is covered by the third material after depositing the third material, and wherein the top surface of the first material above the third photosensitive diode is not covered by the third material after depositing the third material.