Display device
AssigneeInnolux Corporation
InventorsCHANDRA LIUS, Kuan-Feng Lee
Life of this patent
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Abstract
A display device includes a substrate, a driving circuit disposed on the substrate and for driving display units, sensing units disposed on the substrate and including a first semiconductor layer, a sensing circuit configured for driving the sensing units and including a second semiconductor layer, and a first passivation layer disposed on the sensing circuit. A thickness of the first semiconductor layer is greater than a thickness of the second semiconductor layer. At least a part of one of the sensing units is disposed in a recess penetrating through the first passivation layer.
Claims20
A display device, comprising:
- a substrate;
- a driving circuit disposed on the substrate and for driving a plurality of display units;
- a plurality of sensing units disposed on the substrate and comprising a first semiconductor layer;
- a sensing circuit for driving the plurality of sensing units and comprising a second semiconductor layer;
- and
- a first passivation layer disposed on the sensing circuit,
- wherein a thickness of the first semiconductor layer is greater than a thickness of the second semiconductor layer, and at least a part of one of the plurality of the sensing units is disposed in a recess penetrating through the first passivation layer.
A display device, comprising:
- a substrate;
- a driving circuit disposed on the substrate and for driving a plurality of display units, wherein the driving circuit comprises at least one driving thin film transistor electrically connected to at least one of the plurality of display units;
- a plurality of sensing units disposed on the substrate;
- a sensing circuit for driving the plurality of sensing units, wherein the sensing circuit comprises at least one sensing thin film transistor electrically connected to at least one of the plurality of sensing units;
- and
- a first passivation layer disposed on the sensing circuit,
- wherein a material of a semiconductor channel layer of the at least one sensing thin film transistor is different from a material of a semiconductor channel layer of the at least one driving thin film transistor, and at least a part of one of the plurality of the sensing units is disposed in a recess penetrating through the first passivation layer.
Dependencies are inferred from the claim text.