Semiconductor structure and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorsKui ZHANG, Yuhan ZHU, Jie LIU, Zhan YING
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Abstract
A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a semiconductor body, bit lines and word lines. The semiconductor body includes a substrate and an isolation structure positioned above the substrate and configured to isolate a plurality of active regions, part of each of the active regions being formed from the substrate. The bit lines are positioned in the substrate and are connected to the active regions. The word lines intersect with the active regions and surround the active regions. The substrate is Silicon On Insulator (SOI) substrate.
Claims20
A semiconductor structure, comprising:
- a semiconductor body which comprises a substrate and an isolation structure positioned above the substrate and configured to isolate a plurality of active regions, wherein part of the active region is formed from the substrate;
- bit lines positioned in the substrate and connected to the active regions;
- and
- word lines intersecting with the active regions and surrounds the active regions;
- wherein the substrate is a Silicon On Insulator (SOI) substrate.
A manufacturing method of a semiconductor structure, comprising:
- forming a substrate which is a Silicon On Insulator (SOI) substrate;
- forming bit lines in the substrate;
- forming a plurality of active regions on the substrate, wherein part of each of the active regions is formed from the substrate, and the bit lines are connected to the active regions;
- and
- forming, above the bit lines, word lines which intersect with the active regions and surround the active regions.
Dependencies are inferred from the claim text.