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US 2022/0102380 A1Published application
Connections from buried interconnects to device terminals in multiple stacked devices structures
AssigneeTokyo Electron Limited
InventorsDaniel CHANEMOUGAME, Lars LIEBMANN, Jeffrey SMITH
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Abstract
In vertically stacked device structures, a buried interconnect and bottom contacts can be formed, thereby allowing connections to be made to device terminals from both below and above the stacked device structures. Techniques herein include a structure that enables electrical access to each independent device terminal of multiple devices, stacked on top of each other, without interfering with other devices and the local connections that are needed.
Claims20
A semiconductor device comprising:
- a stack of device tiers having at least three device tiers including a lower device tier, one or more intermediate device tiers stacked vertically over the lower device tier, and an upper device tier stacked vertically over the intermediate device tiers, each device tier having at least one lateral gate-all-around channel of a field effect transistor;
- a first interconnect line positioned below the stack of device tiers;
- a second interconnect line positioned above the stack of device tiers;
- a bottom contact that connects the first interconnect line to one or more first device terminals from the stack of device tiers;
- and
- a top contact that connects the second interconnect line to one or more second device terminals from the stack of device tiers.
3 more elements
A method of forming a semiconductor device, the method comprising:
- forming a stack of nano-channels spaced vertically from each other;
- forming a first interconnect line positioned below the stack of nano-channels;
- creating a bottom contact that connects to the first interconnect line;
- forming gate-all-around channels from the stack of nano-channels, wherein the gate-all-around channels form a stack of device tiers having at least three device tiers including a lower device tier, one or more intermediate device tiers stacked vertically over the lower device tier, and an upper device tier stacked vertically over the one or more intermediate device tiers;
- connecting the first interconnect line to one or more first device terminals from the stack of device tiers using the bottom contact;
- and
- connecting a second interconnect line to one or more second device terminals from the stack of device tiers using a top contact, the second interconnect line formed above the stack of device tiers.
4 more elements
Dependencies are inferred from the claim text.