Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device, comprising:

• a stacked body including conductive patterns and insulating patterns that are alternately stacked;
• a filling layer configured to pass through the stacked body;
• a first channel layer configured to pass through the stacked body and coupled to the filling layer;
• a second channel layer configured to pass through the stacked body and coupled to the filling layer;
• and
• a memory layer configured to surround the filling layer, the first channel layer, and the second channel layer,
• wherein the first channel layer includes a first junction surface and a second junction surface that both contact with the filling layer, and
• wherein the first junction surface and the second junction surface are spaced apart from each other.

A semiconductor device, comprising:

• a stacked body including conductive patterns and insulating patterns that are alternately stacked;
• a filling layer configured to pass through the stacked body;
• a first channel layer configured to pass through the stacked body and coupled to the filling layer;
• a second channel layer configured to pass through the stacked body and coupled to the filling layer;
• and
• a memory layer configured to surround the filling layer, the first channel layer, and the second channel layer,
• wherein the filling layer comprises a first protrusion and a second protrusion that both contact with the first channel layer,
• wherein the first protrusion includes a first outside wall in contact with the memory layer and a first junction surface in contact with the first channel layer,
• wherein the second protrusion includes a second outside wall in contact with the memory layer and a second junction surface in contact with the first channel layer, and
• wherein the first outside wall and the second outside wall are substantially parallel to each other.

A method of manufacturing a semiconductor device, comprising:

• forming a stacked body;
• forming a first hole configured to pass through the stacked body;
• sequentially forming a memory layer, a preliminary channel layer, and a preliminary interposed layer in the first hole;
• separating the preliminary interposed layer into a plurality of interposed layers by etching the preliminary interposed layer;
• separating the preliminary channel layer into a plurality of channel layers;
• and
• forming a filling layer coupled to the interposed layers and the channel layers.