Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorKi Hong LEE
Life of this patent
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Abstract
Provided herein may be a method of manufacturing a semiconductor device. The method may include forming a stacked structure including alternately stacked first material layers and second material layers; forming a first opening including a through hole passing through the stacked structure and a notch coupled to the through hole and located in at least one of the interfaces of the first material layers and second material layers; forming a sacrificial layer including a first part located in the through hole and a second part located in the notch; and oxidizing the first part of the sacrificial layer and thereby forming a first sacrificial pattern located in the through hole and a plugging pattern located in the notch.
Claims23
A method of manufacturing a semiconductor device, comprising:
- forming a stacked structure including alternately stacked first material layers and second material layers;
- forming a first opening including a through hole passing through the stacked structure and a notch coupled to the through hole and located in at least one of interfaces of the first material layers and second material layers;
- forming a sacrificial layer including a first part located in the through hole and a second part located in the notch;
- and
- oxidizing the first part of the sacrificial layer and thereby forming a first sacrificial pattern located in the through hole and a plugging pattern located in the notch.
A method of manufacturing a semiconductor device, comprising:
- forming a stacked structure including alternately stacked first material layers and second material layers and at least one interface layer interposed between the first material layers and the second material layers;
- forming a first opening including a through hole passing through the stacked structure and at least one notch coupled to the through hole and protruding into the at least one interface layer;
- forming a sacrificial layer in the first opening to fill the notch;
- and
- forming a plugging pattern located in the notch by oxidizing a portion of the sacrificial layer.
A method of manufacturing a semiconductor device, comprising:
- forming a stacked structure;
- forming a first opening passing through the stacked structure and including a first region, a second region, a bowing region located between the first and second regions, and a notch coupled to the bowing region and protruding into the stacked structure, the first region having a first width, the second region having a second width less than the first width, and the bowing region having a third width greater than the first width;
- forming a sacrificial layer in the first opening to fill the notch;
- and
- forming a plugging pattern located in the notch by oxidizing a portion of the sacrificial layer.
A semiconductor device, comprising:
- a stacked structure including alternately stacked conductive layers and insulating layers;
- a channel structure penetrating the stacked structure;
- and
- a plugging pattern located in at least one of interfaces between the conductive layers and insulating layers and including a first surface facing the conductive layer and a second surface facing the insulating layer, at least one of the first and second surfaces having an inclination.
Dependencies are inferred from the claim text.