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US 2022/0102354 A1Published application
Semiconductor device and method for fabricating the same
AssigneeXia Tai Xin Semiconductor (Qing Dao) Ltd.
InventorsCHANG-HYEON NAM, INJOON YEO
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Abstract
A method for fabricating a semiconductor device, including the steps of: providing a substrate comprising a preliminary pattern formed thereon; forming an opening through the preliminary pattern to expose a conductive portion in the substrate; forming a spacer on a sidewall of the opening; performing a wet etching process to form a hole in the conductive portion; removing the spacer; and depositing a conductive pattern over the sidewall of the opening and a surface of the hole.
Claims8
A method for fabricating a semiconductor device, the method comprising:
- providing a substrate comprising a preliminary pattern formed thereon;
- forming an opening through the preliminary pattern to expose a conductive portion in the substrate;
- forming a spacer on a sidewall of the opening;
- performing a wet etching process to form a hole in the conductive portion;
- removing the spacer;
- and
- depositing a conductive pattern over the sidewall of the opening and a surface of the hole.
4 more elements
Dependencies are inferred from the claim text.