Semiconductor structure and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorTao CHEN
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Abstract
A semiconductor structure manufacturing method includes: providing a substrate and etching the substrate to form first trenches; filling each of the first trenches with an oxide layer having a top surface not lower than that of the substrate; etching regions, adjacent to side walls of the first trench, in the oxide layer downwards to form second trenches, wherein a depth of the second trench is less than a depth of the first trench and a width of the second trench is less than half of a width of the first trench; and forming supplementary layers in the second trenches.
Claims20
A manufacturing method of a semiconductor structure, comprising:
- providing a substrate, and etching the substrate to form first trenches;
- filling each of the first trenches with an oxide layer having a top surface not lower than a top surface of the substrate;
- etching regions, adjacent to side walls of the first trench, in the oxide layer downwards to form second trenches, wherein a depth of the second trench is less than a depth of the first trench and a width of the second trench is less than half of a width of the first trench;
- and
- forming supplementary layers in the second trenches.
A semiconductor structure manufactured with a manufacturing method, the manufacturing method comprising:
- providing a substrate, and etching the substrate to form first trenches;
- filling each of the first trenches with an oxide layer having a top surface not lower than a top surface of the substrate;
- etching regions, adjacent to side walls of the first trench, in the oxide layer downwards to form second trenches, wherein a depth of the second trench is less than a depth of the first trench and a width of the second trench is less than half of a width of the first trench;
- and
- forming supplementary layers in the second trenches.
A semiconductor structure, comprising:
- a substrate;
- first trenches located on the substrate;
- oxide layers located in the first trenches, the oxide layer having a top surface not lower than a top surface of the substrate;
- second trenches located in regions, adjacent to side walls of the first trench, in the oxide layer, wherein a depth of the second trench is less than a depth of the first trench and a width of the second trench is less than half of a width of the first trench;
- and
- supplementary layers located in the second trenches.
Dependencies are inferred from the claim text.