Multi-layer etch stop layers for advanced integrated circuit structure fabrication

An integrated circuit structure, comprising:

• a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon;
• a first dielectric etch stop layer directly on and continuous over the trench insulating layers and the gate insulating layers;
• a second dielectric etch stop layer directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer;
• a third dielectric etch stop layer directly on and continuous over the second dielectric etch stop layer, the third dielectric etch stop layer distinct from the second dielectric etch stop layer;
• an interlayer dielectric material on the third dielectric etch stop layer;
• an opening in the interlayer dielectric material, in the third dielectric etch stop layer, in the second dielectric etch stop layer, in the first dielectric etch stop layer, and in one of the trench insulating layers;
• and
• a conductive structure in the opening, the conductive structure in direct contact with a corresponding one of the trench contact structures.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a conductive line in a first interlayer dielectric material above a substrate;
• a first dielectric etch stop layer directly on the conductive line and the first interlayer dielectric material;
• a second dielectric etch stop layer directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer;
• a third dielectric etch stop layer directly on and continuous over the second dielectric etch stop layer, the third dielectric etch stop layer distinct from the second dielectric etch stop layer;
• a second interlayer dielectric material on the third dielectric etch stop layer;
• an opening in the second interlayer dielectric material, in the third dielectric etch stop layer, and in the second dielectric etch stop layer, in the first dielectric etch stop layer;
• and
• a conductive structure in the opening, the conductive structure in direct contact with the conductive line.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon;
• a first dielectric etch stop layer directly on and continuous over the trench insulating layers and the gate insulating layers;
• a second dielectric etch stop layer directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer;
• a third dielectric etch stop layer directly on and continuous over the second dielectric etch stop layer, the third dielectric etch stop layer distinct from the second dielectric etch stop layer;
• an interlayer dielectric material on the third dielectric etch stop layer;
• an opening in the interlayer dielectric material, in the third dielectric etch stop layer, in the second dielectric etch stop layer, in the first dielectric etch stop layer, and in one of the trench insulating layers;
• and
• a conductive structure in the opening, the conductive structure in direct contact with a corresponding one of the trench contact structures.