Semiconductor device

A semiconductor device in which an insulated gate bipolar transistor region and a diode region are provided adjacent to each other in a semiconductor substrate including an n-type drift layer between a first principal surface and a second principal surface opposite to the first principal surface and an emitter electrode is provided on the first principal surface of the semiconductor substrate, wherein

• the insulated gate bipolar transistor region includes
• a p-type base layer provided on the first principal surface side of the drift layer,
• an n-type source layer selectively provided on the first principal surface side of the base layer and at a surface layer of the semiconductor substrate on the first principal surface side,
• a p-type first contact layer provided on the first principal surface side of the base layer and in a region in which the source layer is not provided on the surface layer of the semiconductor substrate on the first principal surface side, the first contact layer being connected with the emitter electrode,
• a gate trench insulating film provided on an inner surface of a trench penetrating through the base layer to the drift layer,
• a gate trench electrode provided in the trench through the gate trench insulating film, and
• a p-type collector layer provided at a surface layer of the semiconductor substrate on the second principal surface side,
• the diode region includes
• a p-type anode layer provided on the first principal surface side of the drift layer,
• a p-type second contact layer provided on the first principal surface side of the anode layer and at the surface layer of the semiconductor substrate on the first principal surface side and connected with the emitter electrode, and
• an n-type cathode layer provided at the surface layer of the semiconductor substrate on the second principal surface side, and
• the second contact layer contains aluminum as p-type impurities.