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US 2022/0102337 A1Published application
Transistor drain design for esd protection and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSHENG-FU HSU, HSIAO-CHING HUANG
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Abstract
A semiconductor device is provided. The semiconductor device comprises a substrate of a first type, a first doped region embedded within the substrate and having a first portion and a second portion, and a first gate electrode disposed above the substrate. The semiconductor device further comprises a well region of a second type and embedded within the substrate. The well region is in contact with the second portion of the first doped region.
Claims21
A semiconductor device, comprising:
- a substrate of a first type;
- a first doped region of a second type embedded within the substrate and having a first portion and a second portion, the second portion of the first doped region being in contact with the substrate at a first interface and a second interface;
- a first gate electrode disposed above the substrate and between the first portion and the second portion of the first doped region;
- and
- a well region of the second type and embedded within the substrate, the well region being in contact with the substrate at a third interface and a fourth interface, wherein
- the well region is in contact with the second portion of the first doped region, and
- a distance between the first interface and the second interface is greater than a distance between the third interface and the fourth interface.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a well region embedded within the substrate;
- a first doped region disposed above and in contact with the well region, wherein
- the first doped region includes dopants of a first type and the well region includes dopants of the first type, and
- a width of the first doped region is greater than a width of the well region.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a substrate of a first type;
- forming a well region of a second type within the substrate;
- forming a first doped region above and in contact with the well region to separate the well region from a surface of the substrate, wherein
- the first doped region includes dopants of the second type, and
- a width of the first doped region is greater than a width of the well region.
2 more elements
Dependencies are inferred from the claim text.