Method for manufacturing semiconductor structure
AssigneeNanya Technology Corporation
InventorsHsih-Yang CHIU, Yi-Jen LO
Life of this patent
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Abstract
A semiconductor structure includes a first die, a second die, and a first conductive via. The first die includes a first dielectric layer and a first landing pad embedded in the first dielectric layer. The second die includes a second dielectric layer and a second landing pad embedded in the second dielectric layer. The first die is disposed on the second die. The second landing pad has a through-hole. The first conductive via extends from the first landing pad toward the second landing pad and penetrates through the through-hole of the second landing pad.
Claims9
A method for manufacturing a semiconductor structure, the method comprising:
- bonding a first die with a second die,
- wherein the first die is disposed on the second die, the first die comprises a first dielectric layer and a first landing pad embedded in the first dielectric layer, the second die comprises a second dielectric layer and a second landing pad embedded in the second dielectric layer, the second landing pad has a through-hole, and a portion of the second dielectric layer is filled in the through-hole of the second landing pad;
- forming a first hole through the first die and the portion of the second dielectric layer of the second die to expose the first landing pad;
- and
- forming a first conductive via in the first hole.
Dependencies are inferred from the claim text.