Semiconductor Device Having Through Silicon Vias and Manufacturing Method Thereof

A method of forming a semiconductor device, comprising:

• providing a semiconductor substrate having a plurality of transistors on a first surface thereof;
• forming a first interlayer dielectric film on the first surface;
• forming a multi-level wiring structure on the first interlayer dielectric film;
• thinning the semiconductor substrate from a surface opposite to the first surface to form a second surface of the semiconductor substrate;
• forming a first back insulating layer on the second surface of the semiconductor substrate;
• forming a second back insulating layer in direct contact with the first back insulating layer, the second back insulating layer having a back surface away from first back insulating layer, wherein the second back insulating layer includes an insulating material different from the first back insulating layer;
• forming an opening on the second back insulating layer, sequentially etching the first back insulating layer and the semiconductor substrate through the opening to form a substrate through hole, wherein the substrate through hole at least reaches the first interlayer dielectric film;
• forming a through silicon via within the substrate through hole, wherein the through silicon via extends from the first surface of the semiconductor substrate and reaches the back surface of the second back insulating layer.