Nonvolatile memory device, system including the same and method of fabricating the same

A nonvolatile memory device comprising:

• a peripheral region including a plurality of circuit elements;
• and
• a cell region which is electrically connected to the plurality of circuit elements and that stores data,
• wherein the cell region comprises
• a substrate extending in a first direction,
• a ground selection line extending in the first direction on the substrate,
• a plurality of word lines stacked sequentially on the ground selection line and extending in the first direction,
• a channel structure penetrating the ground selection line and the plurality of word lines, and extending in a second direction intersecting the first direction and perpendicular to an upper surface of the substrate,
• a landing pad spaced apart from the ground selection line and the plurality of word lines in the first direction,
• a rear contact plug connected to a lower face of the landing pad and extending in the second direction intersecting the first direction,
• a front contact plug connected to an upper face of the landing pad that is opposite the lower face, the front contact plug extending in the second direction,
• an input/output pad electrically connected to the rear contact plug;
• and
• an upper bonding pad electrically connected to the front contact plug and connected to at least a part of a plurality of circuit elements of the nonvolatile memory device.

A nonvolatile memory system comprising:

• a main board;
• a nonvolatile memory device on the main board;
• and
• a controller electrically connected to the nonvolatile memory device on the main board,
• wherein the nonvolatile memory device comprises
• a substrate extending in a first direction,
• a ground selection line extending in the first direction on the substrate,
• a plurality of word lines stacked sequentially on the ground selection line and extending in the first direction,
• a channel structure penetrating the ground selection line and the plurality of word lines and extending in a second direction intersecting the first direction and perpendicular to an upper surface of the substrate, the channel structure storing data,
• a landing pad spaced apart from the ground selection line and the plurality of word lines in the first direction,
• a rear contact plug connected to a lower face of the landing pad and extending in the second direction intersecting the first direction,
• a front contact plug connected to an upper face of the landing pad that is opposite the lower face, the front contact plug extending in the second direction,
• an input/output pad electrically connected to the rear contact plug, and
• an upper bonding pad electrically connected to the front contact plug and connected to at least a part of a plurality of circuit elements of the nonvolatile memory device.