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US 2022/0102304 A1Published application
Method of forming semiconductor structure
AssigneeNanya Technology Corporation
InventorsTing-Cih KANG, Hsih-Yang CHIU
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Abstract
A method of forming a semiconductor structure includes following steps. The first substrate is etched to form an opening, such that a first conductive pad of the first substrate is exposed through the opening. A first RDL pad is formed over the first conductive pad and extends to a top surface of the first substrate. A first bond pad is formed on a first portion of the first RDL pad, in which the first portion of the first RDL pad overlaps with the top surface of the first substrate.
Claims7
A method of forming a semiconductor structure, comprising:
- etching a first substrate to form an opening, such that a first conductive pad of the first substrate is exposed through the opening;
- forming a first RDL pad over the first conductive pad and extending to a top surface of the first substrate;
- and
- forming a first bond pad on a first portion of the first RDL pad, wherein the first portion of the first RDL pad overlaps with the top surface of the first substrate.
1 more element
Dependencies are inferred from the claim text.