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US 2022/0102303 A1Published application
Method for fabricating semiconductor device with stress relief structure
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
Life of this patent
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Abstract
The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.
Claims17
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming an intrinsically conductive pad above the substrate;
- and
- forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.
1 more element
Dependencies are inferred from the claim text.