Method of manufacturing semiconductor device
AssigneeNanya Technology Corporation
InventorsCHIANG-LIN SHIH, PEI-JHEN WU, CHING-HUNG CHANG, HSIH-YANG CHIU
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Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming an interconnect layer on a semiconductor component, wherein the interconnect layer contains at least one metal pad electrically coupled to the semiconductor component; depositing an insulating layer on the interconnect layer; depositing a bonding dielectric on the insulating layer; and forming a re-routing layer penetrating through the bonding dielectric and the insulating layer and contacting the interconnect layer.
Claims7
A method of manufacturing a semiconductor device, the method comprising:
- forming an interconnect layer on a semiconductor component, wherein the interconnect layer contains at least one metal pad electrically coupled to the semiconductor component;
- depositing an insulating layer on the interconnect layer;
- depositing a bonding dielectric on the insulating layer;
- and
- forming a re-routing layer penetrating through the bonding dielectric and the insulating layer and contacting the interconnect layer.
Dependencies are inferred from the claim text.