Device for controlling trapped ions and method of manufacturing the same
AssigneeInfineon Technologies Austria AG
InventorsClemens Roessler, Silke Auchter, Martin Gruber, Johanna Elisabeth Roessler
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Abstract
A device for controlling trapped ions includes a first semiconductor substrate. A second semiconductor substrate is disposed over the first semiconductor substrate. At least one ion trap is configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate. A spacer is disposed between the first semiconductor substrate and the second semiconductor substrate, the spacer including an electrical interconnect which electrically connects a first metal layer structure of the first semiconductor substrate to a second metal layer structure of the second semiconductor substrate.
Claims15
A device for controlling trapped ions, the device comprising:
- a first semiconductor substrate;
- a second semiconductor substrate disposed over the first semiconductor substrate;
- at least one ion trap configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate;
- and
- a spacer disposed between the first semiconductor substrate and the second semiconductor substrate, the spacer comprising an electrical interconnect which electrically connects a first metal layer structure of the first semiconductor substrate to a second metal layer structure of the second semiconductor substrate.
A method of manufacturing a device for controlling trapped ions, the method comprising:
- providing a first semiconductor substrate having a first metal layer structure;
- providing a second semiconductor substrate having a second metal layer structure;
- and
- connecting the first semiconductor substrate and the second semiconductor substrate by mounting a spacer between the first semiconductor substrate and the second semiconductor substrate, such that the first metal layer structure is electrically connecting to the second metal layer structure via an electrical interconnect provided by the spacer to form one or a plurality of ion traps configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate.
Dependencies are inferred from the claim text.