Method of forming semiconductor structure
AssigneeNanya Technology Corporation
InventorShing-Yih SHIH
Life of this patent
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Abstract
A method of forming a semiconductor structure includes following steps. A first substrate and a second substrate are bonded together, in which the first substrate has a landing pad. The second substrate is etched to form an opening, in which the landing pad is exposed through the opening. A metal layer is formed over the landing pad and a sidewall of the second substrate that surrounds the opening. A buffer structure is formed over the metal layer. The buffer structure is etched such that a top surface of the buffer structure is below a top surface of the metal layer. A barrier structure is formed over metal layer and the buffer structure.
Claims7
A method of forming a semiconductor structure, comprising:
- boning a first substrate and a second substrate together, wherein the first substrate has a landing pad;
- etching the second substrate to form an opening, wherein the landing pad is exposed through the opening;
- forming a metal layer over the landing pad and a sidewall of the second substrate that surrounds the opening;
- forming a buffer structure over the metal layer;
- etching the buffer structure such that a top surface of the buffer structure is below a top surface of the metal layer;
- and
- forming a barrier structure over the metal layer and the buffer structure.
Dependencies are inferred from the claim text.