Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a circuit substrate;
• a first semiconductor package disposed on the circuit substrate;
• a thermal interface material disposed on a rear surface of the first semiconductor package further away from the circuit substrate;
• and
• a metallic cap, extending on the thermal interface material over the first semiconductor package and the circuit substrate,
• wherein the rear surface of the first semiconductor package presents a warped profile,
• wherein the metallic cap includes a first region in direct contact with the thermal interface material over the semiconductor package, and
• wherein a thickness of the metallic cap varies throughout the first region conformally to the warped profile of the rear surface of the semiconductor package, the thickness being measured along a vertical stacking direction of the circuit substrate, the first semiconductor package, and the thermal interface material.

A manufacturing method of a semiconductor device, comprising:

• connecting a semiconductor package to a circuit substrate, wherein the semiconductor package connected to the circuit substrate presents a warped profile and a rear surface of the semiconductor package is uneven;
• disposing a first adhesive along edges of the circuit substrate;
• placing a metallic cover over the semiconductor package, wherein the metallic cover includes a cap having an uneven bottom surface with a complementary shape with respect to the rear surface of the semiconductor package;
• matching the uneven bottom surface of the cap with the uneven rear surface of the semiconductor package;
• and
• bonding the metallic cover to the circuit substrate via the first adhesive.