Monolithic formation of a set of interconnects below active devices
AssigneeTokyo Electron Limited
InventorsDaniel CHANEMOUGAME, Lars LIEBMANN, Jeffrey SMITH
Life of this patent
Estimating the term…
Abstract
An additional set of interconnects is created in bulk material, allowing connections to active devices to be made from both above and below. The interconnects below the active devices can form a power distribution network, and the interconnects above the active devices can form a signaling network. Various accommodations can be made to suit different applications, such as encapsulating buried elements, using sacrificial material, and replacing the bulk material with a dielectric. Epitaxial material can be used throughout the formation process, allowing for the creation of a monolithic substrate.
Claims20
A method of fabrication, the method comprising:
- providing a substrate, the substrate comprising bulk semiconductor material;
- forming an opening in the bulk semiconductor material patterned for a first wiring structure;
- filling the opening in the bulk semiconductor material with metal such that the first wiring structure is formed at least partially within the bulk semiconductor material;
- epitaxially growing active semiconductor material over the first wiring structure;
- forming one or more active devices in the active semiconductor material over the first wiring structure;
- and
- forming a second wiring structure over the one or more active devices.
A system comprising a monolithic substrate comprising:
- a first wiring structure formed within bulk material of a semiconductor wafer;
- one or more active devices formed in an epitaxially grown semiconductor material above the first wiring structure;
- and
- a second wiring structure formed above the one or more active devices.
Dependencies are inferred from the claim text.