Semiconductor Device and Method

A semiconductor device comprising:

• a redistribution line and a plurality of conductive traces over a semiconductor substrate;
• a passivation structure over the redistribution line and the plurality of conductive traces;
• a first under-bump metallurgy (UBM) structure over the redistribution line, the first UBM structure extending through the passivation structure and being electrically coupled to the redistribution line;
• and
• a second UBM structure over the plurality of conductive traces, the second UBM structure being electrically isolated from the plurality of conductive traces by the passivation structure.

A method comprising:

• forming a first conductive feature and a second conductive feature over a semiconductor substrate;
• forming a passivation structure over the first conductive feature and the second conductive feature;
• etching the passivation structure to form a first opening exposing the first conductive feature;
• etching the passivation structure to form a second opening over the second conductive feature, wherein a first portion of the passivation structure remains between the second opening and the second conductive feature;
• forming a first under-bump metallurgy (UBM) structure in the first opening and electrically coupled to the first conductive feature;
• and
• forming a second UBM structure in the second opening, wherein the second UBM structure is electrically isolated from the second conductive feature by the first portion of the passivation structure.