Semiconductor device having chip stacked and molded
AssigneesKabushiki Kaisha Toshiba, Toshiba Memory Corporation
InventorsTakayuki TAJIMA, Kazuo SHIMOKAWA
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Abstract
A semiconductor device includes an insulating layer, a conductive member provided inside the insulating layer, a chip disposed on a first surface of the insulating layer and connected to the conductive member, and an electrode connected to the conductive member via a barrier layer. A resistivity of the barrier layer is higher than a resistivity of the conductive member. At least a portion of the electrode protrudes from a second surface of the insulating layer.
Claims10
1-6. (canceled)
A method for manufacturing a semiconductor device, comprising:
- forming a release layer, a first barrier layer, a conductive layer, and a second barrier layer on a support substrate;
- forming a first insulating layer on the second barrier layer, a first opening being formed in the first insulating layer;
- forming a second opening in the second barrier layer by etching using the first insulating layer as a mask, the second opening communicating with the first opening;
- forming an electrode inside the second opening and inside a lower portion of the first opening;
- forming a third barrier layer on an inner surface of an upper portion of the first opening;
- forming a first via inside an upper portion of the first opening and forming an interconnect on the first insulating layer, a resistivity of the interconnect being lower than a resistivity of the third barrier layer;
- forming a second insulating layer on the interconnect, a third opening being formed in the second insulating layer;
- forming a second via inside the third opening, the second via being connected to the interconnect;
- connecting a chip to the second via;
- removing the support substrate by removing the release layer;
- and
- removing the first barrier layer, the conductive layer, and the second barrier layer.
A method for manufacturing a semiconductor device, comprising:
- forming a conductive layer and an insulating layer on a support substrate, a first opening being formed in the conductive layer, a second opening being formed in the insulating layer and communicating with the first opening;
- forming an electrode inside the first opening and inside a lower portion of the second opening;
- forming a conductive member inside an upper portion of the second opening and on the insulating layer;
- connecting a chip to the conductive member;
- and
- removing the support substrate and the conductive layer.
Dependencies are inferred from the claim text.