Methods for forming contact structures and semiconductor devices thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLinchun Wu, Kun Zhang, Zhong Zhang, Wenxi Zhou, Zhiliang Xia
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Abstract
Embodiments of methods for forming contact structures and semiconductor devices thereof are disclosed. In an example, a method for forming a semiconductor device includes forming a spacer structure from a first surface of the base structure into the base structure, forming a first contact portion surrounded by the spacer structure, and forming a second contact portion in contact with the first contact portion. The second contact extends from a second surface of the base structure into the base structure.
Claims15
A method for forming a semiconductor device, comprising:
- forming a spacer structure from a first surface of the base structure into the base structure;
- forming a first contact portion surrounded by the spacer structure;
- and
- forming a second contact portion in contact with the first contact portion, the second contact extending from a second surface of the base structure into the base structure.
The method of 13, further comprising:
- forming a channel structure comprising a semiconductor channel in the memory stack, a lower portion of the semiconductor channel being in contact with the conductive layer;
- and
- forming a contact structure extending from the second surface of the base structure into the base structure and in contact with the conductive layer, wherein the contact structure is formed in the same process that forms the second contact portion.
Dependencies are inferred from the claim text.