Chip-scale package architectures containing a die back side metal and a solder thermal interface material
AssigneeIntel Corporation
InventorsSusmriti Das Mahapatra, Malavarayan Sankarasubramanian, Shenavia Howell, John Harper, Mitul Modi
Life of this patent
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Abstract
An integrated circuit (IC) package comprising a die having a front side and a back side. A solder thermal interface material (STIM) comprising a first metal is over the backside. The TIM has a thermal conductivity of not less than 40 W/mK; and a die backside material (DBM) comprising a second metal over the STIM, wherein the DBM has a CTE of not less than 18×10−6 m/mK, wherein an interface between the STIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.
Claims21
An integrated circuit (IC) package, comprising:
- a die having a front side and a back side;
- a thermal interface material (TIM) comprising a first metal over the backside, wherein the TIM has a thermal conductivity of not less than 40 W/mK;
- and
- a die backside material (DBM) comprising a second metal over the TIM, wherein the DBM has a CTE of not less than 18×10−6 m/mK, wherein an interface between the TIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.
A system, comprising:
- a microprocessor;
- and
- a memory coupled to the microprocessor, the microprocessor or the memory comprising:
- an integrated circuit (IC) package, comprising:
- a die having a front side and a back side;
- a thermal interface material (TIM) comprising a first metal over the backside, wherein the TIM has a thermal conductivity of not less than 40 W/mK;
- and
- a die backside material (DBM) comprising a second metal over the TIM, wherein the DBM has a CTE of not less than 18×10−6 m/mK, wherein an interface between the TIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.
A method for making an IC package, comprising:
- receiving a die having a front side and a backside;
- forming a bilayer metal structure over the backside of the die, wherein the bilayer metal structure comprises a metal sheet including a first metal layer bonded to a second metal layer;
- wherein the first metal layer comprises a solder;
- and
- reflowing the solder, wherein the second metal layer is solder-bonded to the backside of the die.
Dependencies are inferred from the claim text.