Plasma processing apparatus and plasma processing method

A plasma processing apparatus, comprising:

• a vacuum processing chamber configured to generate plasma in a state where an inside of the vacuum processing chamber is exhausted to vacuum, so as to process a processing target material;
• a processing state detection unit configured to detect a state of a processing target film of the processing target material which is processed inside the vacuum processing chamber;
• and
• a control unit configured to control the vacuum processing chamber and the processing state detection unit, wherein
• the processing state detection unit includes:
• a light emission detection unit configured to detect light emission of the plasma generated inside the vacuum processing chamber;
• a calculation unit configured to obtain a differential waveform data of the light emission of the plasma detected by the light emission detection unit;
• a database unit that stores a plurality of pieces of differential waveform pattern data in advance;
• a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit;
• and
• an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.