Semiconductor wafer evaluation method and manufacturing method and semiconductor wafer manufacturing process management method

A manufacturing method of a semiconductor wafer having a polished surface, comprising:

• mirror polishing a semiconductor wafer to form a polished surface;
• performing a cleaning process of cleaning the semiconductor wafer provided with the polished surface with one or more kinds of cleaning liquid;
• measuring an LPD of the polished surface both before and after the cleaning process with a laser surface inspection device;
• and
• distinguishing the type of defect or foreign substance measured as the LPD, based on measurement results obtained in the measuring, according to the following distinguishing standards:
• TABLE A
• Type of Defect or
• Measurement Result
• Foreign Substance
• LPD where a detection size
• PID
• X before the cleaning process
• and a detection size Y after
• the cleaning process fulfill
• the relationship X < Y
• LPD that is detected before
• Normal particle
• the cleaning process but is
• not detected after the cleaning process
• LPD where a detection size
• Firmly-adherent particle
• X before the cleaning process
• and a detection size Y after
• the cleaning process fulfill
• the relationship X ≥ Y
• and further comprising:
• subjecting a semiconductor wafer that is judged as an acceptable product based on the results of the distinguishing to a preparation process that delivers the semiconductor wafer as a finished product.

A semiconductor wafer manufacturing process management method,

• wherein a manufacturing process to be managed comprises:
• performing a polishing process of mirror polishing a semiconductor wafer to form a polished surface;
• and
• performing a cleaning process of cleaning the semiconductor wafer provided with the polished surface with one or more kinds of cleaning liquid, and
• the method comprises:
• measuring an LPD of the polished surface both before and after the cleaning process with a laser surface inspection device;
• and
• distinguishing the type of defect or foreign substance measured as the LPD, based on measurement results obtained in the measuring, according to the following distinguishing standards:
• TABLE A
• Type of Defect or
• Measurement Result
• Foreign Substance
• LPD where a detection size
• PID
• X before the cleaning process
• and a detection size Y after
• the cleaning process fulfill
• the relationship X < Y
• LPD that is detected before
• Normal particle
• the cleaning process but is
• not detected after the cleaning process
• LPD where a detection size
• Firmly-adherent particle
• X before the cleaning process
• and a detection size Y after
• the cleaning process fulfill
• the relationship X ≥ Y
• and the method further comprises:
• judging the necessity of one or both of managing the polishing process and managing the cleaning process on the basis of the results of the distinguishing.