Semiconductor device and semiconductor device fabrication method
AssigneeLapis Semiconductor Co., Ltd.
InventorTORU MORI
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Abstract
A semiconductor device, including: a first well of a first polarity formed in a semiconductor substrate; a source region and a drain region of a second polarity formed in the first well so as to be separated from each other by a predetermined spacing; an impurity region of the first polarity formed so as to surround the source region and the drain region; a first gate oxide film formed on the semiconductor substrate at a position between the source region and the drain region; a second gate oxide film formed on the first gate oxide film; a gate electrode formed on the second gate oxide film; and an impurity layer of the first polarity formed below the first gate oxide film.
Claims7
A semiconductor device, comprising:
- a first well of a first polarity formed in a semiconductor substrate;
- a source region and a drain region of a second polarity formed in the first well so as to be separated from each other by a predetermined spacing;
- an impurity region of the first polarity formed so as to surround the source region and the drain region;
- a first gate oxide film formed on the semiconductor substrate at a position between the source region and the drain region;
- a second gate oxide film formed on the first gate oxide film;
- a gate electrode formed on the second gate oxide film;
- and
- an impurity layer of the first polarity formed below the first gate oxide film.
A method of fabricating a semiconductor device including a first element configured to function as a fuse and a second element configured to function as a transistor formed on a same semiconductor substrate, the method comprising:
- forming a well of a first polarity in the semiconductor substrate;
- forming a source region and a drain region of a second polarity in the well so as to be separated from each other by a predetermined spacing;
- forming a first gate oxide film on the semiconductor substrate at a position between the source region and the drain region;
- forming the second element by forming a second gate oxide film on the first gate oxide film;
- and
- further forming the first element by forming an impurity layer of the first polarity below the first gate oxide film.
Dependencies are inferred from the claim text.