Wafer processing method
AssigneeDisco Corporation
InventorKenji FURUTA
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Abstract
A wafer processing method includes an adhesive film bonding step of bonding an adhesive film on a side of a back surface of the wafer, an adhesive film cutting-off step of cutting off at least the adhesive film that is bonded on the side of the back surface of the wafer along streets from the side of the back surface of the wafer, a modified layer forming step of irradiating a laser beam of a wavelength that has transmissivity through the wafer with the laser beam focused inside the wafer, so that modified layers are formed along the streets, respectively, and a dividing step of, after performing the adhesive film cutting-off step and the modified layer forming step, applying an external force to the wafer so that the wafer is divided from the modified layers as starting points.
Claims9
A wafer processing method having devices in respective regions defined by a plurality of intersecting streets on a front surface thereof, the processing method comprising:
- an adhesive film bonding step of bonding an adhesive film on a side of a back surface of the wafer;
- an adhesive film cutting-off step of cutting off at least the adhesive film that is bonded on the side of the back surface of the wafer along the streets from the side of the back surface of the wafer;
- a modified layer forming step of irradiating a laser beam of a wavelength that has transmissivity through the wafer with the laser beam focused inside the wafer, so that modified layers are formed along the streets, respectively;
- and
- a dividing step of, after performing the adhesive film cutting-off step and the modified layer forming step, applying an external force to the wafer so that the wafer is divided from the modified layers as starting points.
Dependencies are inferred from the claim text.