Integrated circuit structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTe-Chih HSIUNG, Peng WANG, Jyun-De WU, Huan-Just LIN
Life of this patent
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Abstract
A method includes depositing a dielectric cap over a gate structure. A source/drain contact is formed over a source/drain region adjacent to the gate structure. A top of the dielectric cap is oxidized. After oxidizing the top of the dielectric cap, an etch stop layer is deposited over the dielectric cap and an interlayer dielectric (ILD) layer over the etch stop layer. The ILD layer and the etch stop layer are etched to form a via opening extending though the ILD layer and the etch stop layer. A source/drain via is filled in the via opening.
Claims20
A method comprising:
- depositing a dielectric cap over a gate structure;
- forming a source/drain contact over a source/drain region adjacent to the gate structure;
- oxidizing a top of the dielectric cap;
- after oxidizing the top of the dielectric cap, depositing an etch stop layer over the dielectric cap and an interlayer dielectric (ILD) layer over the etch stop layer;
- etching the ILD layer and the etch stop layer to form a via opening extending though the ILD layer and the etch stop layer;
- and
- filling a source/drain via in the via opening.
A method comprising:
- depositing a source/drain contact over a source/drain region;
- oxidizing a top of the source/drain contact to form a metal oxide region in the source/drain contact;
- after oxidizing the top of the source/drain contact, forming an interlayer dielectric (ILD) layer covering the metal oxide region of the source/drain contact;
- forming a via opening in the ILD layer to expose the source/drain contact;
- and
- filling a source/drain via in the via opening.
A device comprising:
- a gate structure;
- a dielectric cap over the gate structure and comprising an oxidized region and an un-oxidized region between the gate structure and the oxidized region;
- a source/drain contact adjacent to the gate structure;
- an interlayer dielectric (ILD) layer over the dielectric cap and the source/drain contact;
- and
- a source/drain via in the ILD layer and electrically connected to the source/drain contact.
Dependencies are inferred from the claim text.