Contact over active gate structures using directed self-assembly for advanced integrated circuit structure fabrication

An integrated circuit structure, comprising:

• a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon;
• a remnant of a di-block-co-polymer over a portion of the plurality of gate structures or the plurality of conductive trench contact structures;
• an interlayer dielectric material over the di-block-co-polymer, over the plurality of gate structures, and over the plurality of conductive trench contact structures;
• an opening in the interlayer dielectric material;
• and
• a conductive structure in the opening, the conductive structure in direct contact with a corresponding one of the gate structures.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon;
• a remnant of a di-block-co-polymer over a portion of the plurality of gate structures or the plurality of conductive trench contact structures;
• an interlayer dielectric material over the di-block-co-polymer, over the plurality of gate structures, and over the plurality of conductive trench contact structures;
• an opening in the interlayer dielectric material;
• and
• a conductive structure in the opening, the conductive structure in direct contact with a corresponding one of the trench contact structures.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon;
• a remnant of a di-block-co-polymer over a portion of the plurality of gate structures or the plurality of conductive trench contact structures;
• an interlayer dielectric material over the di-block-co-polymer, over the plurality of gate structures, and over the plurality of conductive trench contact structures;
• an opening in the interlayer dielectric material;
• and
• a conductive structure in the opening, the conductive structure in direct contact with a corresponding one of the gate structures.