Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication

A method of fabricating a metallization layer for a semiconductor structure, the method comprising:

• forming a plurality of trenches in a hardmask layer above an inter-layer dielectric (ILD) layer above a substrate to form a patterned hardmask layer, the plurality of trenches representing all possible via locations for the metallization layer;
• filling the plurality of trenches with a bottom-up fill dielectric material;
• and
• removing the bottom-up fill dielectric material from fewer than all of the plurality of trenches to define selected via locations for the metallization layer.

A method of patterning a layer for a semiconductor structure, the method comprising:

• forming a plurality of trenches in a dielectric layer above a semiconductor layer above a substrate to form a patterned dielectric layer;
• filling the plurality of trenches with a bottom-up fill dielectric material;
• removing the patterned dielectric layer selective to the bottom-up fill dielectric material;
• and
• using the bottom-up fill dielectric material to pattern the semiconductor layer.

A method of fabricating an integrated circuit structure, the method comprising:

• forming a first layer of an interconnect structure disposed above a substrate, the first layer comprising a first grating of alternating metal lines and dielectric lines in a first direction, wherein the dielectric lines of the first grating have an uppermost surface higher than an uppermost surface of the metal lines of the first grating;
• forming a second layer of the interconnect structure disposed above the first layer of the interconnect structure, the second layer comprising a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction, wherein the dielectric lines of the second grating have a lowermost surface lower than a lowermost surface of the metal lines of the second grating, wherein the dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating;
• and
• forming a region of dielectric material disposed between a metal line of the metal lines of the first grating and a metal line of the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating, the region of dielectric material comprising a bottom-up fill dielectric material and a blocking layer, the blocking layer separate and distinct from the bottom-up fill dielectric material, and the blocking layer comprising a material different than the bottom-up fill dielectric material.