Semiconductor device, manufacturing method of semiconductor device, and storage device

A semiconductor device, comprising:

• a semiconductor substrate, provided with a plurality of first areas and a plurality of second areas arranged alternately and adjacent to each other;
• laminated structures, arranged on the semiconductor substrate and each intersecting with the first areas and the second areas;
• side wall structures, arranged on sidewalls of the laminated structures, wherein the laminated structure and the side wall structure located in each of the first areas are arranged in a step shape with a middle higher than both sides of the step shape, and the laminated structures and the side wall structures form bit lines;
• and
• dielectric layers, arranged on the semiconductor substrate and each located in the first area between the bit lines, wherein the dielectric layers are connected with the bit lines to form a plurality of capacitor contact holes.

A storage device, comprising a semiconductor device,

• the semiconductor device comprising:
• a semiconductor substrate, provided with a plurality of first areas and a plurality of second areas arranged alternately and adjacent to each other;
• laminated structures, arranged on the semiconductor substrate and each intersecting with the first areas and the second areas;
• side wall structures, arranged on sidewalls of the laminated structures, wherein the laminated structure and the side wall structure located in each of the first areas are arranged in a step shape with a middle higher than both sides of the step shape, and the laminated structures and the side wall structures form bit lines;
• and
• dielectric layers, arranged on the semiconductor substrate and each located in the first area between the bit lines, wherein the dielectric layers are connected with the bit lines to form a plurality of capacitor contact holes.