Interconnect structure with dielectric cap layer and etch stop layer stack
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Chun Wang, Jen Hung Wang
Life of this patent
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Abstract
A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a metal cap layer over an upper surface of the first conductive feature distal from the substrate; selectively forming a dielectric cap layer over an upper surface of the first dielectric layer and laterally adjacent to the metal cap layer, wherein the metal cap layer is exposed by the dielectric cap layer; and forming an etch stop layer stack over the metal cap layer and the dielectric cap layer, wherein the etch stop layer stack comprises a plurality of etch stop layers.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a first conductive feature in a first dielectric layer disposed over a substrate;
- forming a metal cap layer over an upper surface of the first conductive feature distal from the substrate;
- selectively forming a dielectric cap layer over an upper surface of the first dielectric layer and laterally adjacent to the metal cap layer, wherein the metal cap layer is exposed by the dielectric cap layer;
- and
- forming an etch stop layer stack over the metal cap layer and the dielectric cap layer, wherein the etch stop layer stack comprises a plurality of etch stop layers.
A method of forming a semiconductor device, the method comprising:
- forming first conductive features in a first dielectric layer disposed over a substrate, wherein first surfaces of the first conductive features distal from the substrate are level with a first surface of the first dielectric layer;
- selectively forming a metal cap layer on the first surfaces of the first conductive features;
- selectively forming a dielectric cap layer on the first surface of the first dielectric layer, wherein the dielectric cap layer is laterally adjacent to the metal cap layer, wherein the dielectric cap layer is formed of a nitride-containing dielectric material;
- forming a plurality of etch stop layers successively on the metal cap layer and on the dielectric cap layer;
- forming a second dielectric layer on the plurality of etch stop layers;
- and
- forming second conductive features in the second dielectric layer, wherein the second conductive features extend through the plurality of etch stop layers and are electrically coupled to respective ones of the first conductive features.
A semiconductor device comprising:
- a substrate;
- a first dielectric layer over the substrate;
- a first conductive feature in the first dielectric layer;
- a metal cap layer on the first conductive feature;
- a dielectric cap layer on an upper surface of the first dielectric layer distal from the substrate, wherein the dielectric cap layer is laterally adjacent to the metal cap layer, wherein the dielectric cap layer comprises a nitride-containing dielectric material, wherein an upper surface of the metal cap layer distal from the substrate is free of the dielectric cap layer;
- an etch stop layer stack on the metal cap layer and the dielectric cap layer, wherein the etch stop layer stack comprises a plurality of etch stop layers;
- a second dielectric layer on the etch stop layer stack;
- and
- a second conductive feature in the second dielectric layer, wherein the second conductive feature extends through the etch stop layer stack and is electrically coupled to the first conductive feature.
Dependencies are inferred from the claim text.