Additive damascene process

A method of forming a device comprising:

• forming a first niobium pattern on a first surface of a substrate;
• depositing a first amorphous silicon layer on the first surface of the substrate and the first niobium pattern;
• planarizing the first amorphous silicon layer so that a top surface of the first niobium pattern is substantially planar to a top surface of the first amorphous silicon layer;
• and
• forming a first electrical component on the top surface of the first amorphous silicon layer in contact with the first niobium pattern.

A device comprising:

• a first conductive pattern located on a first surface of a substrate;
• a first amorphous silicon layer located on the first surface of the substrate, wherein an exposed surface of the first amorphous silicon layer is substantially coplanar with an exposed surface of the first conductive pattern;
• and
• a first electrical component, wherein a portion of the electrical component is located on the first amorphous silicon layer, and wherein a portion of the electrical component is located on the first conductive pattern.