Patterning material including carbon-containing layer and method for semiconductor device fabrication

A method for lithography patterning, comprising:

• providing a target layer;
• depositing a carbon-containing layer over the target layer using a deposition process providing of precursors delivered toward a surface and chemically modifying the precursors to obtain the carbon-containing layer on the surface, wherein the carbon-containing layer has at least 50% carbon;
• forming a silicon-containing layer on the carbon-containing layer;
• forming a resist layer over the silicon-containing layer;
• exposing a portion of the resist layer to a radiation to provide a patterned resist layer;
• etching a portion of the silicon-containing layer uncovered by the patterned resist layer to form a patterned silicon-containing layer;
• after etching the portion of the silicon-containing layer, etching a portion of the carbon-containing layer uncovered by the patterned silicon-containing layer to form a patterned carbon-containing layer;
• and
• using the patterned carbon-containing layer to define a pattern in the target layer.

A method of patterning a semiconductor device, the method comprising:

• depositing an amorphous carbon layer over a substrate;
• depositing a silicon-containing layer directly on the amorphous carbon layer;
• spin coating a photosensitive layer over the silicon-containing layer;
• and
• using a lithography process, patterning the photosensitive layer to provide a first opening;
• etching the silicon-containing layer through the first opening;
• using the etched silicon-containing layer as a masking element during an etching of the deposited amorphous carbon layer.