Method for reducing line end spacing and semicondcutor devices manufactured thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYI-NIEN SU, Yu-Yu CHEN
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Abstract
Embodiments of the present disclosure provide methods for forming conductive lines with dielectric cut features. Particularly, embodiments of present disclosure provide a method for forming conductive line pattern using two patterning processes. A line pattern is formed in the first patterning process. A cut pattern is formed over the line pattern in the second patterning process. The cut pattern is formed by forming cut openings with a width smaller than the line width of the line pattern and then filling the cut opening with a mask material.
Claims20
A method, comprising,
- depositing a first hard mask layer over a dielectric layer;
- forming a plurality of mask strips in the first hard mask layer, wherein the plurality of mask strips are separated by a plurality of openings;
- filling a first material in the plurality of openings between the plurality of mask strips;
- forming a cut opening through the first material;
- filling the cut opening with a second material;
- removing the first material to expose the second material and the plurality of mask strips;
- and
- patterning the dielectric layer using the plurality of mask strips and the second material.
A method, comprising:
- depositing a first hard mask layer;
- depositing a second hard mask layer on the first hard mask layer;
- patterning the second hard mask layer to form a plurality of mask strips over the first hard mask layer, wherein the plurality of mask strips extend along a first direction;
- depositing a mask layer over the plurality of mask strips and the first hard mask layer;
- depositing a photoresist layer over the mask layer;
- patterning the photoresist layer to form a cut opening to expose at least one of the plurality of mask strips;
- forming a cut mask in the cut opening, wherein the cut mask extends along a second direction substantially perpendicular to the first direction;
- and
- patterning the first hard mask layer using the plurality of mask strips and the cut mask as etching masks.
A method, comprising:
- depositing a dielectric layer;
- patterning the dielectric layer using extreme ultraviolet (EUV) patterning technology to form a first opening and a second opening in the dielectric layer;
- and
- filling the first and second openings in the dielectric layer to form a first conductive line and a second conductive line in the dielectric layer, wherein the first and second conductive lines extend along the same direction, an end portion of the first conductive line faces an end portion of the second conductive line, an end spacing between the end portions of the first and second conductive lines is less than a line width of the first conductive line, and the line width is less than about 25 nm.
Dependencies are inferred from the claim text.