Treating a silicon on insulator wafer in preparation for manufacturing an atomistic electronic device interfaced with a cmos electronic device

A method for treating a wafer comprising a semiconductor layer overlying an insulator layer:

• (a) selectively removing a portion of the semiconductor layer from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer, wherein:
• (i) the inactive region of the wafer comprises an exposed portion of the insulator layer, but none of the semiconductor layer;
• and
• (ii) the first active region of the wafer comprises a first portion of the semiconductor layer and a first portion of the insulator layer;
• (b) forming at least one conductor in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit;
• and
• (c) selectively treating the first active region of the wafer to remove a native oxide layer from the first portion of the semiconductor layer, wherein the treating comprises energizing the electrical circuit with an external power source to induce resistive heating of the first portion of the semiconductor layer.