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US 2022/0102196 A1Published application
Method of manufacturing semiconductor structure
AssigneeNanya Technology Corporation
InventorsYing-Cheng CHUANG, Che-Hsien LIAO
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Abstract
A method of manufacturing a semiconductor structure includes: etching a substrate according to a hard mask to form a plurality of trenches in the substrate; performing a nitridation treatment on the trenches of the substrate; filling the trenches of the substrate with a flowable isolation material; and solidifying the flowable isolation material to form an isolation material. A semiconductor structure manufactured by the method is also provided.
Claims10
A method of manufacturing a semiconductor structure, comprising:
- etching a substrate according to a hard mask to form a plurality of trenches in the substrate;
- performing a nitridation treatment on the trenches of the substrate;
- filling the trenches of the substrate with a flowable isolation material;
- and
- solidifying the flowable isolation material to form an isolation material.
2 more elements
Dependencies are inferred from the claim text.