Method for forming semiconductor structure and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorShang GAO
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Abstract
A method for forming a semiconductor structure includes the following steps: providing a substrate having a trench in a surface; forming an isolation layer on the surface of the substrate, the isolation layer covering a side wall and a bottom wall of the trench; pretreating the isolation layer such that an initial oxide layer is formed on a surface of the isolation layer; forming an advanced oxide layer on a surface of the initial oxide layer with an atomic layer deposition process; and forming a dielectric layer on a surface of the advanced oxide layer with a spin-on dielectrics (SOD) process such that the dielectric layer fills the trench.
Claims15
A method for forming a semiconductor structure, comprising steps of:
- providing a substrate having a trench in a surface of the substrate;
- forming an isolation layer on the surface of the substrate, the isolation layer covering a side wall and a bottom wall of the trench;
- pretreating the isolation layer such that an initial oxide layer is formed on a surface of the isolation layer;
- forming an advanced oxide layer on a surface of the initial oxide layer with an atomic layer deposition process;
- and
- forming a dielectric layer on a surface of the advanced oxide layer with a spin-on dielectrics (SOD) process such that the dielectric layer fills the trench.
A semiconductor structure, comprising a substrate having a trench in a surface of the substrate, wherein an inner surface of the trench is provided with an isolation layer, an initial oxide layer, an advanced oxide layer and a dielectric layer in sequence;
- the dielectric layer fills the trench;
- and the initial oxide layer is formed on a surface of the isolation layer by pretreatment with plasma oxygen.
Dependencies are inferred from the claim text.