Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorJin Woong KIM
Life of this patent
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Abstract
A semiconductor device including: a trench defining an active region in a substrate; a first semiconductor liner formed over the trench; a second semiconductor liner formed over the first semiconductor liner; and a device isolation layer formed over the second semiconductor liner and filling the trench. Disclosed is also a method for fabricating a semiconductor device, the method including: forming a trench defining an active region in a substrate; forming a plurality of semiconductor liners over the trench; performing pretreatment before forming each of the semiconductor liners; and performing post-treatment after forming each of the semiconductor liners.
Claims21
A method for fabricating a semiconductor device, the method comprising:
- forming a trench defining an active region in a substrate;
- forming a plurality of semiconductor liners over the trench;
- performing pretreatment before forming each of the semiconductor liners;
- and
- performing post-treatment after forming each of the semiconductor liners.
A method for fabricating a semiconductor device, the method comprising:
- forming a trench defining an active region in a substrate;
- replacing a native oxide formed on the trench with a solid salt;
- sublimating the solid salt to expose a surface of the trench;
- forming a first polysilicon liner over the trench;
- performing post-treatment to remove a contaminant formed on the first polysilicon liner;
- replacing a native oxide formed on the first polysilicon liner with a solid salt;
- sublimating the solid salt to expose a surface of the first polysilicon liner;
- forming a second polysilicon liner over the first polysilicon liner;
- and
- forming a device isolation layer filling the trench over the second polysilicon liner.
Dependencies are inferred from the claim text.